A high power amplifier at Ka-band

摘要

In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted by using the HFSS software to build the physical structure of the passive components. At last we get a multi-stage amplifier design through ADS simulation.