Transfer-free grown bilayer graphene memory devices

摘要

In this paper we report on the application of in-situ CCVD grown bilayer graphene field effect transistors (BiLGFETs) as memory devices, grown in a Silicon-CMOS compatible fabrication process. By means of catalytic chemical vapor deposition (CCVD) the BiLGFETs are realized directly on oxidized silicon substrate without transfer. These BiLGFETs possess unipolar p-type device characteristics with a high on/off-current ratio between 1×10⁵ and 1×10⁷ at room temperature [1, 2]. The hysteresis of BiLGFETs depends on the cycling range of the applied backgate voltage VBG while the sub-threshold slope is uniform for varied temperatures and varied cycling ranges of the backgate voltage [3]. Based on the observed properties of BiLGFETs it is possible to use BiLGFETS as memory devices.