Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;
Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;
phase change memory; serial peripheral interface; error correction code;
机译:片上神经网络的相变存储器件
机译:近阈值SIDO DC-DC转换器,具有高精度ZCD,用于相位变化存储器芯片
机译:基于40nm标准CMOS技术的基于TiSbTe合金的相变存储芯片
机译:16-KBit SPI相变内存芯片与ECC方案
机译:具有芯片多处理器和相变存储器的嵌入式系统的能源感知优化。
机译:使用随机相位掩膜方案的片上显微镜
机译:校正:在128 MB相变存储芯片中实现的12状态多级单元存储