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16-Kbit SPI Phase Change Memory Chip with ECC Scheme

机译:具有ECC方案的16 Kb SPI相变存储芯片

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摘要

A serial peripheral interface (SPI) 16-Kbit phase change memory chip based on 0.13 μm CMOS process is designed. It contains a parallel error correcting code (ECC) circuit, which can correct 2 bits in every 8 bits without clock delay, enabling the write and read operations performed at bus speed. All the data transfers in 8-bit groups and can be read or written with write protection scheme by unlimited cycle, in which address can automatically increase one by one. Simulation results show that the chip can work correctly in SPI mode and with ECC scheme. It is now under testing.
机译:设计了一种基于0.13μmCMOS工艺的串行外设接口(SPI)16 Kbit相变存储芯片。它包含一个并行纠错码(ECC)电路,该电路可在没有时钟延迟的情况下每8位纠正2位,从而实现以总线速度执行的写和读操作。所有数据以8位为一组进行传输,并且可以使用写保护方案以不受限制的周期进行读写,其中地址可以自动一一递增。仿真结果表明,该芯片可以在SPI模式和ECC方案下正常工作。现在正在测试中。

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  • 来源
  • 会议地点 Shanghai(CN)
  • 作者单位

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China Graduate University of Chinese Academy of Sciences, Beijing 10080, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    phase change memory; serial peripheral interface; error correction code;

    机译:相变存储器串行外设接口;纠错码;

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