首页> 外文会议>ISCAS 2012;IEEE International Symposium on Circuits and Systems >Ultrasound energy harvesting system for deep implanted-medical-devices (IMDs)
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Ultrasound energy harvesting system for deep implanted-medical-devices (IMDs)

机译:用于深层植入医疗设备(IMD)的超声能量收集系统

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摘要

It is desirable in active medical implants to derive energy from external sources to charge a rechargeable battery. In this paper we have developed a novel system to transfer energy via ultrasound to a deep implanted medical device. Hence, an external base station is designed to transmitt energy and a 64-channel high-voltage driver is proposed for a spherical transducer array. Moreover, a shunt-C class-E power amplifier (PA) is employed as core element for the driver, showing a drain efficiency (DE) of 71% and a power added efficiency (PAE) of 57% including gate-driver switching loss. In addition, a cascaded of two low-drop-out (LDO) regulators is used within the implanted device to reduce rectifier ripple and to set the charge voltage for the micro-energy cell to 4.1 V. The LDOs are implemented in a CMOS 0.18 µm high-voltage (HV) technology and measurement along with simulated results are reported.
机译:在有源医疗植入物中,期望从外部源获取能量以对可再充电电池充电。在本文中,我们开发了一种新颖的系统,可通过超声将能量传输到深层植入的医疗设备。因此,将外部基站设计为传输能量,并为球形换能器阵列提出了64通道高压驱动器。此外,并联C类E功率放大器(PA)被用作驱动器的核心元件,其漏极效率(DE)为71%,功率附加效率(PAE)为57%,包括栅极驱动器开关损耗。此外,在植入的器件内使用了两个级联的两个低压降(LDO)调节器,以减少整流器纹波并将微能量电池的充电电压设置为4.1V。LDO在CMOS 0.18中实现报告了µm高压(HV)技术和测量以及仿真结果。

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