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PWF: Reducing write response time in flash memory-based storage devices

机译:PWF:减少基于闪存的存储设备中的写响应时间

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Modern flash memory-based storage devices use write buffer not only to reduce the amount of data actually written to the flash memory but also to quickly respond to each write request. A buffered page is flushed to the flash memory as late as possible, expecting possible future write hits, so long as the buffer manager does not select it as a victim for replacement to acquire free space for newly arrived write request. While this delayed-flushing can maximize the buffer hit ratio, in terms of the write response time, it can be a hurdle for fast write response. SSD can respond to a write request only when selected victim pages are safely written to the flash memory and the requested data are written to the write buffer. In this paper, we propose the Proactive Write buffer Flushing (PWF) scheme that proactively flushes a portion of buffered data to the flash memory during the I/O requests intervals. Our simulation study showed that the proposed scheme effectively reduces the write response time with negligible overhead.
机译:基于现代闪存的存储设备使用写缓冲区不仅可以减少实际写入闪存的数据量,而且可以快速响应每个写请求。只要缓冲管理器没有选择它作为替换的牺牲品来获取新到达的写请求的可用空间,缓冲的页就会尽可能晚地刷新到闪存,以期将来可能会有写入命中。尽管这种延迟刷新可以最大程度地提高缓冲区命中率,但就写响应时间而言,它可能成为快速写响应的障碍。仅当将选定的受害者页安全地写入闪存并将请求的数据写入写缓冲区时,SSD才能响应写入请求。在本文中,我们提出了主动写缓冲区刷新(PWF)方案,该方案在I / O请求间隔期间将刷新一部分缓冲数据主动刷新到闪存。我们的仿真研究表明,所提出的方案以可忽略的开销有效地减少了写响应时间。

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