Enhanced photovoltaic properties of a-C/Si heterojunction solar cells

摘要

Boron doped amorphous carbon (a-C) thin films were synthesized by microwave surface wave plasma (MW SWP) chemical vapor deposition (CVD). The XPS results show successful doping of boron into the films, whereas atomic concentration of B into the films was about 1.6 at. %. Hall measurements indicate that the films were p-type in semiconducting nature. TEM and Raman results showed that the some graphene layers are grown into the a-C film. The photovoltaic measurement of a-C:B-Si heterojunction solar cell displayed rectifying I–V characteristics under dark and illumination (AM 1.5 100 mW/cm2) showed photovoltaic behavior with open-circuit voltage (Voc) of 0.21 V, short circuit current density (Jsc) of 31.88 mA/cm2, fill factor (FF) of 0.36 and conversion efficiency (η) of 2.4 %. The films show photoconductive.