Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation

摘要

We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material's relaxation time constants by differential transmission experiments.