Two and three-electrode structure for quantum-dot semiconductor optical amplifiers

摘要

To compensate for the decreasing carrier density in the far side of quantum-dot semiconductor optical amplifiers (QD-SOAs), which directly compromises the optical gain, multi-electrode approach for these devices is introduced. In our study two and three-electrode QD-SOA are studied and tried to establish a base for comparison between these multi-electrode techniques and constant form of injected current. The optical gain of QD-SOA is improved by nearly 10% through discretizing the optimum non-uniform current and then applying it to multi-electrode structure. For doing so, the rate equation model is employed and solved through finite difference method and MATLAB ODE.