Photoluminescence of porous silicon nanostructures with optimum current density of photo-electrochemical anodisation

摘要

P-type silicon wafer (<100> orientation; boron doping; 0.75 ∼ 10 Ωcm⁻¹) was used to prepare samples of porous silicon nanostructures. All the samples have been prepared by using photo-electrochemical anodization. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm²), sample B (J=20 mA/cm²), sample C (J=30 mA/cm²), sample D (J=40 mA/cm²) and sample E (J=50 mA/cm²). Photoluminescence (PL) spectra were investigated. Sample B gives the maximum peak position of PL spectrum at ∼675 nm.