Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication

摘要

We show for the first time, the results concerning low frequency noise (1HZ–10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation in the power. This specific behavior is explained taking into account the physical properties of APDs.