Evaluation of lookup-table non-quasi-static nonlinear models at microwave and mm-wave frequencies

摘要

A comparison between two different, yet analytical approaches for lookup-table large-signal model construction is presented in this study. Both approaches use the same linear (small-signal) model as the starting point to construct the large-signal model. The first nonlinear model employs the charge- and current-sources to represent the nonlinearity of the active part of the device where the extended charge- and current-sources are added to compensate for the non-quasi-static (NQS) effects at mm-wave frequencies. The second nonlinear model employs the small-signal model schematic and adapts it to be used directly for large-signal simulations. The study was performed on SOI multi-Fin MOSFET transistors. Both modeling approaches can reproduce the device behavior at microwave and mm-wave frequencies and under highly nonlinear conditions with good accuracy.