Single Grain Scratch Tests on GaAs for the Determination of Relevant Engaging Parameters for a Ductile Material Removal

摘要

Monocrystalline silicon will also in the future keep its outstanding position as a substrate material for microsystem technology. In addition, other semiconductor materials such as GaAs are gaining bigger market shares due to their more favorable semiconductor electronic characteristics. However, there are higher costs, compared to silicon, and the production and machinability of the bulk material is more difficult. One way to improve the surface quality and subsurface damage is a ductile, crack free material removal. The paper on hand presents fundamental investigations determining the conditions for a transition from brittle microcrack formation to purely plastic deformation ("Brittle-to-Ductile-Transition") particularly for the material GaAs.