INDUCED INTRACENTER OPTICAL TRANSITIONS IN COMPRESSED p-Ge

摘要

Earlier we have observed the induced far-infrared emission from uniaxially compressed p-Ge at strong electric field [1]. The possible reason for the induced emission was shown to be a population inversion of strain-split shallow acceptor levels [2]. The results of spectral investigations of the induced radiation carried out by means of far-infrared grating monochromator are presented. The data obtained were compared with the theoretical calculations and showed that the induced emission in compressed p-Ge is due to the radiative transitions between strain-split impurity levels.