首页> 外文会议>1995 URSI international symposium on signals, systems, and electronics >RECENT APPLICATIONS OF 2D AND QUASI 2D SIMULATIONS : EVALUATION OF PERFORMANCE AND FUNDAMENTAL LIMITATION OF POWER FET
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RECENT APPLICATIONS OF 2D AND QUASI 2D SIMULATIONS : EVALUATION OF PERFORMANCE AND FUNDAMENTAL LIMITATION OF POWER FET

机译:2D和准2D模拟的最新应用:功率FET的性能和基本限制的评估

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摘要

In this paper, recent results concerning FETs for power applications are presented. The study is based on two kinds of simulation which make possible to perform exhaustive investigations : a physical two dimensional hydrodynamic energy model and a quasi two dimensional model. The study of the potentialities and limitations of HEMTs for applications beyond 60 GHz and LT GaAs MISFETs for low frequency ones is proposed for examples.
机译:在本文中,介绍了有关功率应用FET的最新结果。该研究基于两种可以进行详尽研究的模拟:物理二维流体动力能量模型和准二维模型。例如,提出了对60 GHz以上应用的HEMT和低频GaAs MISFET的潜力和局限性的研究。

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