New High Frequency Integrated Silicon Capacitor Solves User's Assembly Problems While Extending High Q and SRF Beyond 10 Gigahertz

摘要

Silicon-based technology has been identified as ideal for use in high-precision capacitors for high -frequency applications such as wireless communications devices, smart cards, etc. Development criteria include the following: 1. use of widely accepted advanced technologies with long history of reliability; 2. simple, mass processing for high precision at low cost; 3. unlimited material supplies available throughout the world; 4. process stability for repeatable high yield of tight tolerances with no trimming necessary; 5. product configuration that would solve major board assembly problems; 6. low profile for smart card applications; 7. product characteristics that would yield higher capacitance density, higher capacitance values per volume; 8. product performance that would assure lower parasitic inductance, lower or equivalent ESR, higher serf-resonant frequencies, and tighter tolerances than previous capacitance technologies. This paper will discuss the technologies involved and present data comparing a new silicon-based capacitor to other high-frequency capacitor technologies presently used.