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Niobium Capacitors: From Raw Materials to Finished Parts

机译:铌电容器:从原材料到成品零件

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The major feature of high CV Nb capacitors that distinguishes them from low CV Nb capacitors and Ta capacitors is saturation of Nb anode with oxygen during the capacitor manufacturing process. This is a result of a high diffusion coefficient for oxygen in Nb at typical manufacturing temperatures and the low effective radius of the powder particles. The combination of these two parameters enables oxygen diffusion into the core of the powder particles and their gradual saturation with oxygen. When the Nb anode becomes saturated with oxygen during the capacitor manufacturing process, further oxygen redistribution during life testing or in the field is suppressed. In this case the probable mechanism of Nb capacitor degradation is crystallization of the anodic Nb_2O_5 film. The crystal growth in the amorphous matrix of the film results in its disruption and, thereby, in the DCL increase. NbO and Nb_2N phases precipitate in the Nb anode during sintering of the high CV Nb powder. This is caused by dissolving of surface oxide and redistribution of oxygen and nitrogen into the bulk of the powder particles. Precipitates of NbO and Nb_2N phases may work as nuclei for Nb_2O_5 crystals, provoking the crystallization process. No precipitates were detected when sintering of the non-doped Nb powder was combined with deoxidizing. The higher the thickness of the amorphous oxide film, the more susceptible it is to crystallization. That is why the usage of Nb anodes with high chemical purity and homogenous phase composition is especially important for the manufacture of capacitors with 10 V and above rated voltages. Obviously, other parameters of the powder, like morphology and pore size distribution, are also important for the higher voltage applications.
机译:高CV Nb电容器与低CV Nb电容器和Ta电容器的不同之处在于,电容器制造过程中Nb阳极充满了氧气。这是由于在典型的制造温度下,Nb中氧的扩散系数较高,而粉末颗粒的有效半径较低。这两个参数的组合使氧气能够扩散到粉末颗粒的核中,并逐渐被氧气饱和。当Nb阳极在电容器制造过程中被氧饱和时,会抑制寿命测试过程中或现场中氧的进一步重新分布。在这种情况下,Nb电容器退化的可能机理是阳极Nb_2O_5膜的结晶。膜的无定形基体中的晶体生长导致其破裂,从而导致DCL的增加。在高CV Nb粉末的烧结过程中,NbO和Nb_2N相沉淀在Nb阳极中。这是由于表面氧化物的溶解以及氧气和氮气重新分布到大部分粉末颗粒中引起的。 NbO和Nb_2N相的沉淀物可以作为Nb_2O_5晶体的核,从而促进了结晶过程。当将未掺杂的Nb粉末的烧结与脱氧结合时,没有检测到沉淀。非晶氧化物膜的厚度越高,则其越容易结晶。这就是为什么使用具有高化学纯度和均匀相组成的Nb阳极对于制造10 V及以上额定电压的电容器尤为重要的原因。显然,粉末的其他参数,如形态和孔径分布,对于高电压应用也很重要。

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