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About theoretical possibility of the direct calculation of images for closely spaced semiconductor and metal

机译：关于直接计算紧密间隔的半导体和金属的图像的理论可能性

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《13th International Vacuum Microelectronics Conference(IVMC 2000)》|2000年|174-175|共2页
会议地点 Guangzhou(CN)
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1. Bandgap shift by quantum confinement effect in (100) Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations [J] . Hironori Yoshioka, Naoya Morioka, Jun Suda, Journal of Applied Physics . 2011,第6期

机译：从制造的金属氧化物半导体场效应晶体管的阈值电压偏移得出的（100）硅纳米线中的量子限制效应引起的带隙偏移
2. DIRECT X-RAY IMAGING SYSTEM USING AN AMPLIFIED METAL-OXIDE-SEMICONDUCTOR IMAGER IN THE 4-13-NM WAVELENGTH REGION [J] . Haga T., Kinoshita H. Applied optics . 1995,第28期

机译：在4-13海里波长区域中使用放大的金属氧化物-半电子成像器成像的直接X射线成像系统
3. Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors [J] . Hidenobu Fukutome, Takashi Saiki, Ryou Nakamura, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：在50 nm以下p-金属氧化物半导体场效应晶体管中直接测量偏移间隔物对载流子分布的影响
4. ABOUT THEORETICAL CALCULATION OF SEMICONDUCTOR'S SURFACE IMAGES FOR CLOSELY SPACED SEMICONDUCTOR AND METAL IN STM [C] . L.G.nchenko, V.V.Ilchenko Second International Symposium on Cold Cathodes May 13-14, 2002 Philadelphia, Pennsylvania . 2002

机译：关于STM中密排空间的半导体和金属的半导体表面图像的理论计算
5. Mechanistic investigations into the sulfonamide metathesis and copper(I)-catalyzed nitrile oxide-alkyne cyclization reactions; the synthesis of chemogenetic and proteomic tools and ligands for novel imaging agents, and theoretical calculations on carbenes with organometallic ligands [D] . Morehouse, Gregory F. 2009

机译：磺酰胺复分解和铜（I）催化的丁腈-炔环化反应的机理研究；化学和蛋白质组学工具和新型显像剂配体的合成，以及带有有机金属配体的卡宾的理论计算
6. Emergence of topological semimetals in gap closing in semiconductors without inversion symmetry [O] . Shuichi Murakami, Motoaki Hirayama, Ryo Okugawa, 2017

机译：无反对称性的半导体间隙闭合中拓扑半金属的出现
7. Bandgap shift by quantum confinement effect in <100> Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations [O] . Yoshioka Hironori, Morioka Naoya, Suda Jun, 2011

机译：从制造的金属氧化物半导体场效应晶体管的阈值电压偏移得出的<100>纳米线中的量子限制效应引起的带隙偏移
8. Theoretical Calculations Supporting Investigation of Metal Contacts to Ultra-Small Semiconductor Structures [R] . Flores, F., Platero, G., Sanchez-Dehesa, J., 1985

机译：支持超小半导体结构金属触点研究的理论计算

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