High Contrast Active Matrix Organic Light Emitting Display With Top Gate Amorphous Silicon Thin Film Transistors

摘要

The photo-leakage current of top gate amorphous silicon thin film transistor (TFT) is studied. Result demonstrates that TFT with n-doped nanocrystalline silicon (n+ nc-Si) layer has at least one order of magnitude smaller than that with n-doped amorphous silicon (n+ a-Si) layer. Effect of n+ nc-Si layer with ultra-low resistance and nanocrystalline on TFT behavior is discussed. High contrast AMOLED display is achieved by using the a-Si:H TFTs with n+ nc-Si and conventional top gate structure.