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SCHOTTKY DIODE HAVING INCREASED ACTIVE SURFACE AREA WITH IMPROVED REVERSE BIAS CHARACTERISTICS AND METHOD OF FABRICATION
SCHOTTKY DIODE HAVING INCREASED ACTIVE SURFACE AREA WITH IMPROVED REVERSE BIAS CHARACTERISTICS AND METHOD OF FABRICATION
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机译:具有改进的反向偏置特性的主动表面区域的肖特基二极管及其制造方法
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摘要
A Schottky diode comprises a semiconductor body (10) of one conductivity type, the semiconductor body having a grooved surface, a metal layer (32) on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body preferably includes a silicon substrate with a grooved surface (12) being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body, and a plurality of doped regions (30) at the bottom of grooves and forming P-N junctions with the semiconductor body. The P-N junctions of the doped regions form carrier depletion regions across and spaced from the grooves to increase the reverse bias breakdown voltage and reduce the reverse bias leakage current.
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