An improved dynamic characteristics 600V PiN diode with recessed anode and double-side Schottky contact for fast reverse recovery

摘要

A high-speed and high-ruggedness 600V PiN diode with the recessed anode and the double-side Schottky is presented. In on-state, the recessed anode shortens the electron current path from the i-layer to the anode electrode and the P- Schottky contact lowers the electron barrier, which reduces the hole injection efficiency at the anode side effectively. The fast recovery is realized due to the reduced amount of the stored carrier and the shortened carrier extraction path. The proposed structure achieves a reverse recovery time (t_rr) of 81ns which is improved by 43% comparing with the conventional structure at the same forward voltage drop (V_F) of 0.99V. Moreover, the high dynamic ruggedness of reverse recovery can be achieved by extra hole injection from the N-buffer surface through the N Schottky contact.