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Key parameters determining structure and properties of sulphide films formed on copper corroding in anoxic sulphide solutions

机译:决定在缺氧硫化物溶液中腐蚀铜的硫化膜的结构和性能的关键参数

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The corrosion behaviour of copper was studied in anoxic solutions containing different concentrations of sulphide (10~(-5)-10~(-3) mol L~(-1)) and chloride (0.1-5 mol L~(-1)) under stagnant and controlled convective conditions. The main determinants of the structure and properties of the copper sulphide (Cu_2S) films formed are the rate of sulphide transport to the surface relative to the rate of its interfacial reaction with copper, and competition between sulphide and chloride for surface adsorption sites. When sulphide diffusion is rate limiting, the sulphide film formed is porous and non-protective, whereas when film growth is not limited by mass transport of sulphide, the sulphide film is compact and protective. The results indicate that, under Swedish repository conditions, the film formed on copper will be porous and non-protective and its growth diffusion controlled.
机译:研究了在不同浓度的硫化物(10〜(-5)-10〜(-3)mol L〜(-1)和氯化物(0.1-5 mol L〜(-1))的缺氧溶液中铜的腐蚀行为。 )在停滞和受控的对流条件下。决定形成的硫化铜(Cu_2S)薄膜结构和性能的主要因素是:硫化物向表面的迁移速度(相对于其与铜的界面反应速度)以及硫化物和氯化物之间对表面吸附位的竞争。当硫化物​​扩散受到速率限制时,所形成的硫化物膜是多孔的且无保护性,而当膜的生长不受硫化物的传质限制时,硫化物膜则致密且具有保护性。结果表明,在瑞典的仓库条件下,在铜上形成的膜将是多孔且无保护性的,其生长扩散得到控制。

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