In_(0.25)Ga_(0.75)As Channel Double Gate Junctionless Transistor

摘要

In this paper we demonstrate sub-30 nm double gate junctionless transistor (DGJLT) with channel of III-V materials. Device performances are studied by 2-D Taurus Medici device simulation. From the results we observe that III-V channel DGJLT provides better device characteristics compared to silicon and germanium channel DGJLT. The sub-30 nm device of III-V material shows high I_(on)/I_(off) ratio, over 10~9, better subthreshold slope and DIBL effect. Silicon and germanium channel DGJLT suffer from high band-to-band tunneling current in off-state, which increases off-state leakage current. In GaAs and In_(0.25)Ga_(0.75)As channel DGJLT due to high energy band gap there is no band-overlap between valence band and conduction band in horizontal direction and hence this provides lower I_(off). We also demonstrate that low doping concentration of In_(0.25)Ga_(0.75)As channel provides higher electron mobility and hence provides high I_(on)/I_(off) ratio.