Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

摘要

The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be 'opened' and 'closed' many times and that the BD recovery partially restores not only the current through the gate, but also the MOSFET channel related electrical characteristics.