Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

摘要

Bismuth doped ZnO (ZnBi_0.03O_0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.