Low temperature chemical vapor deposition of titanium dioxide thin films using teranitratititanium (IV)

摘要

Crystalline titantium doixde films were deposited on silicon (100) at temperatures as low as 184 deg C using the volatile moecular precursor, tetranitratottitantium (IV). Deposition rates in a low pressure chemical vapor deposition (LP)CVD) ractor operated at 230-500 deg C with a precursor vessel temperature at 22 deg C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Follwing post-deposition annealing in oxygen and hydrogeh, Pt/TiO_2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19-30 and leakage current densities as low as 10~(-8) Amp/cm~2.