LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF TITANIUM DIOXIDE THIN FILMS USING TETRANITRATOTITANIUM (IV)

摘要

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 deg C using the volatile molecular precursor, tetranitratotitanium (IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230-500 deg C with a precursor vessel temperature at 22 deg C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO_2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19-30 and leakage current densities as low as 10~(-8) Amp/cm~2.