Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
Microelectronics Research Center, The University of Texas, Austin, U.S.A.;
nanowire; silicon-germanium; heterostructures; field-effect transistors;
机译:带工程外延Ge-Si_xGe_(1-x)核壳纳米线异质结构
机译:外延Ge-Si_xGe_(1-x)和Si-Si_xGe_(1-x)核-壳纳米线的壳形态和拉曼光谱
机译:Ge-Si_xGe_(1-x)核壳纳米线的导热系数测量与分析
机译:Ge-Si_xge_(1-x)核心壳纳米线异质结构的生长和电子性质
机译:国外基板上用于光电子应用的核-壳异质结构纳米线。
机译:核-壳纳米线共振隧穿二极管的电子性能
机译:4 si / Ge核壳纳米线的第一性原理研究 - 结构和电子性质
机译:Inas(x)sb(1-x),al(y)Ga(1-y)sb和Inas(x)sb(1-x)/ al(y)Ga(1-y)sb的生长和性质异质