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Growth and Properties of InAs(x)Sb(1-x), Al(y)Ga(1-y)Sb, and InAs(x)Sb(1-x)/Al(y)Ga(1-y)Sb Heterostructures

机译：Inas（x）sb（1-x），al（y）Ga（1-y）sb和Inas（x）sb（1-x）/ al（y）Ga（1-y）sb的生长和性质异质

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作者
Kim, J. H.; Yang, D.; Chen, Y. C.; Bhattacharya, P.;
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年度 1991
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总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconducting films; Epitaxial growth; Electron mobility; Substrates; Reprints;

机译：半导体薄膜;外延生长;电子迁移率;衬底;重印;

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1. Substrate effect on the electronic structure in Ga_xIn_(1-x)As_ySb_(1-y)/GaSb and Ga_xIn_(1-x)As_ySb_(1-y)/InAs [J] . Nadir Bouarissa Infrared physics and technology . 1999,第5期

机译：Ga_xIn_（1-x）As_ySb_（1-y）/ GaSb和Ga_xIn_（1-x）As_ySb_（1-y）/ InAs中的电子结构对衬底的影响
2. Elastic properties of Al_xln_(1-x)P_ySb_(1-y) and Al_xGa_(1-x)P_ySb_(1-y) lattice matched to InAs substrate [J] . S. Zerroug, F. Ali Sahraoui, N. Bouarissa Materials Letters . 2006,第4期

机译：与InAs衬底匹配的Al_xln_（1-x）P_ySb_（1-y）和Al_xGa_（1-x）P_ySb_（1-y）晶格的弹性特性
3. Electron g-factor study in Ga_(1-x)In_xAs_ySb_(1-y)-GaSb and GaSb-Ga_(1-x)In_x As_y Sb_(1-y)-GaSb quaternary alloy semiconductor spherical quantum dots [J] . R Sanchez-Cano, N Porras-Montenegro Semiconductor science and technology . 2011,第10期

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4. Electron g-factor in bulk Ga_(1-x)In_(x)As_(y)Sb_(1-y)/GaSb quaternary alloy and in GaSb/Ga_(1-x)In_(x)As_(y)Sb_(1-y)/GaSb Spherical quantum dots [C] . R. Sanchez-Cano, N. Porras-Montenegro International Conference on the Physics of Semiconductors . 2011

机译：在批量Ga_（1-x）中的电子G型in_（x）AS_（y）Sb_（1-Y）/ gasb季合金和Gasb / Ga_（1-x）In_（x）AS_（Y）SB_（ 1-y）/ gasb球形量子点
5. Dark Current Suppression, Optical Performance Improvement and High Frequency Operation of InAs/GaSb and InAs/InAsSb Type-II Superlattices-Based Infrared Devices [D] . Chevallier, Romain. 2019

机译：InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制，光学性能改进和高频操作
6. Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires [O] . Ning Luo, Guang-Yao Huang, Gaohua Liao, -1

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7. Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb [O] . Gélinas Guillaume 2015

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8. LPEE Growth and Characterization of In(x)Ga(1-x)AS(y)Sb(1-y) Lattice Matched toGaSb and InAs for Photodetectors [R] . Iyer, S. N., Fadl, A. A. 1994

机译：LpE生长和表征In（x）Ga（1-x）as（y）sb（1-y）晶格与Gasb和Inas相匹配的光电探测器

Growth and Properties of InAs(x)Sb(1-x), Al(y)Ga(1-y)Sb, and InAs(x)Sb(1-x)/Al(y)Ga(1-y)Sb Heterostructures

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