Growth and electronic properties of Ge-Si_xGe_(1-x) core-shell nanowire heterostructures

摘要

We report the growth and characterization of Ge-Si_xGe_(1-x) core-shell nanowires. Using a combination of vapor-liquid-solid nanowire growth and ultra-high-vacuum chemical vapor deposition conformal growth, we demonstrate the realization of epitaxial Ge-Si_xGe_(1-x) core-shell nanowire heterostmctures with tunable shell content. We investigate the intrinsic electronic properties of Ge-Si_xGe_(1-x) core-shell nanowires using back-gate dependent two- and four-terminal resistance measurements, and demonstrate high performance Ge-Si_xGe_(1-x) core-shell nanowire field-effect transistors with highly doped source and drain.