40-Gb/s 4 x 10 VCSEL Driver in 0.35-μm CMOS Technology

摘要

In this paper, we present a 40 Gb/s VCSEL driver ( 4 * 10 channels, 1 Gbps/ch) designed and fabricated in HYNIX 0.35 μm 2-poly 4-matel CMOS technology. The CMOS driver designed for a free space optical interconnect system is consisted of two NMOS for driving a VCSEL and protection circuit rejecting influence of electro-static discharge (ESD) or unexpected input signal with several tens voltage amplitude. Two NMOS with CMOS channel length of 0.4 μm and width of 100 μm are used for adjusting dc bias current from 0 to 27 mA and dc modulation current from 0 to 13.8 mA. Protection circuit is made of two diodes. The purpose of the protection circuit is to permit the input modulation voltage range only from -5 to 5V.