In_(0.7)Ga_(0.3)As Tunneling Field-Effect-Transistors with LaAlO_3 and ZrO_2 High-k Dielectrics

摘要

We investigated the device structure and fabrication process of In_(0.7)Ga_(0.3)As tunneling field-effect-transistors (TFETs) with atomic-layer-deposited (ALD) high-k dielectrics. We compared the device performance of In_(0.7)Ga_(0.3)As TFETs with p++/i and p++/n+ tunneling junctions. TFETs with p++/n+ tunneling junction exhibit higher drive current and lower subthreshold swing than devices with p++/i junction. Device characteristics of InGaAs TFETs with different high-k dielectrics LaAlO_3 and ZrO_2 have also been studied. In_(0.7)Ga_(0.3)As TFETs with ZrO_2 (EOT～0.8 nm) exhibit subthreshold swing of 80mV/dec and drive current of 44 mA/mm (at V_g-V_(th)=2 V).