TUNNELING FIELD EFFECT TRANSISTOR HAVING HIGH-K DIELECTRIC LAYER

摘要

PURPOSE: A tunneling field effect transistor with a high dielectric film is provided to implement low power and high energy efficiency by forming a tunneling junction with a rapid energy band gap slope, and a P+ region or N+ region to which ions are implanted. CONSTITUTION: A tunneling field effect transistor comprises a semiconductor substrate, a gate, an N+ domain(22) and a P+ domain(24). A gate(42) is formed on the semiconductor substrate by interposing a gate insulation layer. The N+ domain and the P+ domain are formed on both sides of the semiconductor substrate by interposing a channel region. The gate insulation layer comprised of a higher dielectric layer than the other parts is formed on one end or both ends of the longitudinal direction of the gate.