Development of 650 nm-emitting VCSELs for cw operation

摘要

This paper reports on the optimization of red vertical-cavity surface-emitting laser (VCSEL) diodes grown by metalorganic vapour phase epitaxy. The VCSEL structure has an GaInP/AlGaInP multi quantum well active zone sandwiched between AlGaAs/AlAs distributed Bragg reflectors (DBRs). We present results on the optimization of the electrical resistance of the p:DBR and the wavelength tuning. Using these optimized parameters pulsed laser operation is demonstrated for wavelengths between 639 nm and 662 nm. At 650 nm the threshold current density is 3.7 kA/cm{sup}2. Cw laser operation is achieved at room temperature. With wet oxidized VCSELs maximum cw output powers of 160 μW are obtained at a wavelength of 656 nm and 10°C.