Development of 650 nm-emitting VCSELs for cw operation

摘要

This paper reports on the optimization of red vertical-cavitysurface-emitting laser (VCSEL) diodes grown by metalorganic vapour phaseepitaxy. The VCSEL structure has an GaInP/AlGaInP multiquantum wellactive zone sandwiched between AlGaAs/AlAs distributed Bragg reflectors(DBRs). We present results on the optimization of the electricalresistance of the p:DBR and the wavelength tuning. Using these optimizedparameters pulsed laser operation is demonstrated for wavelengthsbetween 639 nm and 662 nm. At 650 nm the threshold current density is3.7 kA/cm². Cw laser operation is achieved at roomtemperature. With wet oxidized VCSELs maximum cw output powers of 160μW are obtained at a wavelength of 656 nm and 10° C