Oxide semiconductor single crystal and its manufacturing method, transparent conductive material, and transparent conductive substrate

摘要

PROBLEM TO BE SOLVED: To provide: an oxide semiconductor single crystal having a larger size compared with a conventional single crystal having a micron order size and having a high occupancy of 1:1:1:4 phase crystal (InGaZnO); a method for manufacturing the same; a transparent conductive material; and a transparent conductive substrate.SOLUTION: The method for manufacturing an oxide semiconductor single crystal includes the step of manufacturing the oxide semiconductor single crystal having a composition represented by (InGaO)(ZnO)(m≥1, n≥1, m, n: an integer) by heating a sample rod including indium, gallium and zinc at a molar ratio represented by In:Ga:Zn=1:1:a (a>1) at a pressure of more than 1 atmosphere in an oxygen containing atmosphere by a floating zone method and cooling a melt formed by the heating.SELECTED DRAWING: Figure 2A