OXIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE MATERIAL AND TRANSPARENT CONDUCTIVE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide: an oxide semiconductor single crystal having a larger size compared with a conventional single crystal having a micron order size and having a high occupancy of 1:1:1:4 phase crystal (InGaZnO₄); a method for manufacturing the same; a transparent conductive material; and a transparent conductive substrate.;SOLUTION: The method for manufacturing an oxide semiconductor single crystal includes the step of manufacturing the oxide semiconductor single crystal having a composition represented by (InGaO₃)_m(ZnO)_n (m≥1, n≥1, m, n: an integer) by heating a sample rod including indium, gallium and zinc at a molar ratio represented by In:Ga:Zn=1:1:a (a1) at a pressure of more than 1 atmosphere in an oxygen containing atmosphere by a floating zone method and cooling a melt formed by the heating.;SELECTED DRAWING: Figure 2A;COPYRIGHT: (C)2019,JPO&INPIT