Embodiment of the substrate depressions fill with sio φ φ 2 φ φ by hdp - vapor deposition with the involvement of h φ φ 2 φ φ o φ φ 2 φ φ or φ φ φ φ 2 h o as the reaction gas

摘要

The reaction chamber, a first silicious reaction gas and an oxygen - precursor as a further reaction gas and fed to a high-density plasma, preferably above 10 · 16 · ions / m · 3 · generates. By means of at least partial substitute the normally used precursor o φ 2 φ, φ 2 φ o φ 2 φ and / or h φ 2 φ o of the reaction chamber is fed in in order to the sputtering effects by o φ 2 φ - ions during the deposition to be further reduced, which lead to undesired speech positions of the sio φ 2 φ on side walls of the recess (25) lead.