FILLING SUBSTRATE DEPRESSIONS WITH SiO2 BY HDP VAPOR PHASE DEPOSITION WITH PARTICIPATION OF H2O2 OR H2O AS REACTION GAS

摘要

PURPOSE: A method is provided to fill even depressions with a high aspect ratio without leading to the formation of voids by filling substrate depressions with silicon oxide using HDP(High Density Plasma) CVD with participation of H2O2 or H2O as reaction gas. CONSTITUTION: A trench(25) is formed in a substrate(28). The trench(25), which has an aspect ratio of approximately, has already been partially filled from a bottom(26) with a SiO2 filling material(30). The SiO2 filling material(30) is deposited on a sidewalls(27) of the trench(25). The deposition of SiO2(30) has also taken place outside the trench(25). The process largely avoids any sputtering effects. On account of the fact that the sputtering effects are largely suppressed by means of the method, the redeposition of the SiO2 on the side walls is reduced in such a way that the depression can be filled in a manner free from pocket voids.