Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film

摘要

An investigation was made into the nitrogen-trimethylgallium mixed electron cy-clotron resonance (ECR) plasma by optical emission spectroscopy (OES).The ECR plasma en-hanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on anα-Al_2O_3 substratc.X-ray diffraction (XRD) analyses showed that the peak of GaN (0002) was at2θ= 34.48°,being sharper and more intense with the increase in the N_2:trimethylgallium(TMG)flow ratio.The results demonstrate that the electron cyclotron resonance-plasma enchanced met-alorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous forthe deposition of GaN film at a low growth temperature.