Method for manufacturing a silicon germanium structure with high mobility by low-energy plasma-enhanced chemical vapor deposition

摘要

A method of manufacturing a semiconductor structure, the manufacturing method includes the following steps. In the process of forming by using low-energy plasma-enhanced chemical vapor deposition of high density (LEPECVD), and virtual substrate consisting of _1-x Ge x layer untilted and _{Si 1-x} Ge x layer inclination _Si, in this step, growth rate is 2nm / s or more, the substrate temperature is 400 ℃ ~850 ℃, and the total reaction gas flow rate at the gas inlet is in 5sccm~200sccm. On the virtual substrate, and (55, 65) modulation-doped layer low-energy plasma-enhanced chemical vapor deposition of low-density Ge channel (LEPECVD, an active region and a (56,64,67) and (14,58,68) In the process of forming by using a) In this step, the dopant gas to introduce hydrogen (H ₂₎ growth chamber and maintained at 400 ℃ ~500 ℃ substrate temperature, to form a modulation doped layer I introduced into the pulsed to the growth chamber.