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Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
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机译:通过低能等离子体增强化学气相沉积形成高迁移率硅锗结构
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摘要
A method for making a semiconductor heterostructure in a growth chamber with gas inlet comprises several steps. In a first step, a virtual substrate is formed on a silicon substrate, comprising a graded Si1-xGex layer followed by a Si1-xGex layer with constant concentration of Ge, using a high-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process. In this step, the growth rate is maintained above 2 nm/s. the substrate temperature between 400° and 850° C., and the total reactive gas flow at the gas inlet between 5 sccm and 200 sccm. In another step, an active region is formed on said virtual substrate comprising a Ge-channel and a modulation-doped layer using a low-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process. In this step, hydrogen (H2) is introduced into the growth chamber to act as a surfactant, a substrate temperature is maintained between 400° and 500° C. and a dopant gas is introduced in a pulsed manner into the growth chamber to provide for the modulation-doped layer.
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机译:在具有气体入口的生长室中制造半导体异质结构的方法包括几个步骤。第一步,在硅基板上形成虚拟基板,该虚拟基板包括渐变的Si 1-x Sub> Ge x Sub>层,然后是Si 1-x <使用高密度,低能量的等离子增强化学气相沉积(LEPECVD)工艺,使具有恒定浓度的Ge的/ Sub> Ge x Sub>层。在此步骤中,生长速率保持在2 nm / s以上。衬底温度在400℃至850℃之间,并且在气体入口处的总反应气体流量在5sccm至200sccm之间。在另一步骤中,使用低密度,低能量等离子体增强化学气相沉积(LEPECVD)工艺在包括Ge沟道和调制掺杂层的所述虚拟衬底上形成有源区。在该步骤中,将氢(H 2 Sub>)引入生长室以充当表面活性剂,将衬底温度保持在400℃至500℃之间,并且以脉冲方式引入掺杂剂气体。以这种方式进入生长室以提供调制掺杂层。
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