首页>
外国专利>
Fabrication of interlayer dielectrics with high quality interfaces for quantum computing devices
Fabrication of interlayer dielectrics with high quality interfaces for quantum computing devices
展开▼
机译:具有用于量子计算设备的高质量接口的层间电介质的制造
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method includes: providing a first wafer including a first substrate, a first insulator layer on the first substrate, and a first dielectric layer on the first insulator layer; providing a second wafer including a second substrate, a second insulator layer on the second substrate, and a second dielectric layer on the second insulator layer; forming a first superconductor layer on the first dielectric layer; forming a second superconductor layer on the second dielectric layer; joining a surface of the first superconductor layer to a surface of the second superconductor layer to form a wafer stack; and forming a third superconductor layer on exposed first surface of the first dielectric layer.
展开▼