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FABRICATION OF INTERLAYER DIELECTRICS WITH HIGH QUALITY INTERFACES FOR QUANTUM COMPUTING DEVICES
FABRICATION OF INTERLAYER DIELECTRICS WITH HIGH QUALITY INTERFACES FOR QUANTUM COMPUTING DEVICES
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机译:量子计算设备中具有高质量接口的层间介质的制造
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摘要
A method includes: providing a first wafer including a first substrate, a first insulator layer on the first substrate, and a first dielectric layer on the first insulator layer; providing a second wafer including a second substrate, a second insulator layer on the second substrate, and a second dielectric layer on the second insulator layer; forming a first superconductor layer on the first dielectric layer; forming a second superconductor layer on the second dielectric layer; joining a surface of the first superconductor layer to a surface of the second superconductor layer to form a wafer stack; and forming a third superconductor layer on exposed first surface of the first dielectric layer.
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