Growth of Epitaxial GaAs and GaAlAs on Silicon Substrates by MOVPE

摘要

The objectives of the programme were to undertake research into the growth ofGaAs and AlGaAs on silicon substrates, to refine deposition techniques, and optimise the electrical, optical, and structural properties of the layers; to prepare GaAs/AlGaAs heterostructures on silicon for opto-electronic and microwave devices; and to explore the monolithic integration of III-V devices on silicon CMOS ICs. We have made substantial achievements within the area of materials growth, resulting in the development of a successful process for the MOVPE growth of GaAs onto silicon excellent device results. In the two sections below, our device and materials growth achievements are outlined. (JES)