MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates

摘要

In this paper we present the achievement of high-quality strained InGaAs/GaAs piezoelectric quantum wells embedded in a P-I-N structure which was grown on a (111)A GaAs substrate at a single temperature by atmospheric pressure metalorganic vapor-phase epitaxy. The growth conditions and the structural and optical properties of a 10-period multi-quantum well structure with an In content of 13/100 in the wells are presented.