Reply to 'Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements''

摘要

In this reply we discuss the use of two and four-probe methods in the resistivity measurements of ITO nanowires. We pointed out that the results obtained by using two or four probe methods are indistinguishable in our case. Additionally we present the correct values for resistivity and consequently for the density of electrons.