Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'

摘要

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.