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A ZnO nanowire vacuum pressure sensor

机译:ZnO纳米线真空压力传感器

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In this study, we report the growth and characterization of lateral ZnO nanowires (NWs) on ZnO: Ga/glass templates. Using x-ray diffraction and micro-Raman spectroscopy, it was found that crystal quality of the as-grown ZnO NWs is good. It was also found that the average length and average diameter of the laterally grown ZnO NWs were 5 mu m and 30 nm, respectively. A vacuum pressure sensor was then fabricated using a single NW bridging across two electrodes. By measuring the current-voltage characteristics of the samples at low pressure, we found that the currents were of 17, 34.28, 57.37 and 96.06 nA for the ZnO NW measured at 1 x 10(-3) Torr, 1 x 10(-4) Torr, 3 x 10(-5) Torr and 5 x 10(-6) Torr, respectively. These values suggest that the laterally grown ZnO NWs prepared in this study are potentially useful for vacuum pressure sensing.
机译:在这项研究中,我们报告了ZnO:Ga /玻璃模板上横向ZnO纳米线(NWs)的生长和特征。使用X射线衍射和显微拉曼光谱法,发现生长的ZnO NW的晶体质量良好。还发现横向生长的ZnO NW的平均长度和平均直径分别为5μm和30nm。然后使用跨两个电极的单个NW桥接来制造真空压力传感器。通过在低压下测量样品的电流-电压特性,我们发现在1 x 10(-3)Torr,1 x 10(-4)下测量的ZnO NW的电流分别为17、34.28、57.37和96.06 nA。 )托,3 x 10(-5)托和5 x 10(-6)托。这些值表明,在这项研究中制备的侧向生长的ZnO NW对于真空压力感测可能是有用的。

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