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首页> 外文期刊>Functional Plant Biology >Variation potential induces decreased PSI damage and increased PSII damage under high external temperatures in pea
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Variation potential induces decreased PSI damage and increased PSII damage under high external temperatures in pea

机译:在豌豆高外部温度下,变异电位导致PSI损伤减少而PSII损伤增加

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摘要

Local burning of a leaf induces a unique electrical signal in plants: variation potential (VP), which can cause numerous functional responses, including changes in photosynthesis. The influences of VP on damage to photosynthetic machinery and thermal resistance of whole plant with heating were investigated in pea (Pisum sativum L.). Under high external temperature (53 degrees C), VP induction was found to cause accelerated initial lowering of photosynthetic parameters, reduced transpiration rate, decreased PSI damage, and increased PSII damage. Increased PSI resistance was in good accordance with our previous data, but VP-induced stimulation of PSII damage under heating required further analysis. The magnitudes of leaf heating in experiments and controls were found to be different (similar to 46-48 degrees C after VP and similar to 44-45 degrees C without it) under identical external temperatures and were connected with different transpiration rates under these conditions. Also PSII damage and the magnitude of leaf heating were strongly correlated. As a result, it was supposed that leaf temperature contributed to VP-induced stimulation of PSII damage with heating. Investigation of VP's influence on pea growth after heating showed that the electrical signal decreased plant growth suppression after heating (i.e. VP-induced increases in PSII damage did not noticeably influence thermal resistance in the whole plant).
机译:叶片的局部燃烧会在植物中诱导出独特的电信号:变化电位(VP),会引起许多功能响应,包括光合作用的变化。研究了豌豆(Pisum sativum L.)对VP对加热对整个植物光合机械损害和热阻的影响。在较高的外部温度(53摄氏度)下,发现VP诱导会导致光合参数的初始初始降低,蒸腾速率降低,PSI损伤减少和PSII损伤增加。增加的PSI抵抗力与我们先前的数据完全吻合,但是在加热下VP诱导的PSII损伤刺激需要进一步分析。在相同的外部温度下,实验和对照中的叶片加热幅度是不同的(类似于VP后的46-48摄氏度,没有VP时的类似于44-45摄氏度),并且在这些条件下与不同的蒸腾速率有关。 PSII损伤与叶片发热的程度也密切相关。结果,据推测,叶片温度通过加热导致了VP诱导的PSII损伤的刺激。对加热后VP对豌豆生长的影响的研究表明,电信号降低了加热后植物生长的抑制作用(即VP引起的PSII伤害的增加并未显着影响整个植物的耐热性)。

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