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Simultaneous transfer and doping of CVD-grown graphene by fluoropolymer for transparent conductive films on plastic

机译:含氟聚合物同时转移和掺杂CVD生长的石墨烯,用于塑料上的透明导电膜

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摘要

Chemical doping can decrease sheet resistance of graphene while maintaining its high transparency. We report a new method to simultaneously transfer and dope chemical vapor deposition grown graphene onto a target substrate using a fluoropolymer as both the supporting and doping layer. Solvent was used to remove a significant fraction of the supporting fluoropolymer, but residual polymer remained that doped the graphene significantly. This contrasts with a more widely used supporting layer, polymethylmethacrylate, which does not induce significant doping during transfer. The fluoropolymer doping mechanism can be explained by the rearrangement of fluorine atoms on the graphene basal plane caused by either thermal annealing or soaking in solvent, which induces ordered dipole moments near the graphene surface. This simultaneous transfer and doping of the graphene with a fluoropolymer increases the carrier density significantly, and the resulting monolayer graphene film exhibits a sheet resistance of ~320 ??/sq. Finally, the method presented here was used to fabricate flexible and a transparent graphene electrode on a plastic substrate.
机译:化学掺杂可以降低石墨烯的薄层电阻,同时保持其高透明度。我们报告了一种新方法,可同时使用含氟聚合物作为支撑层和掺杂层将化学气相沉积生长的石墨烯转移和掺杂到目标衬底上。使用溶剂去除了大部分的含氟聚合物,但是保留了残留的聚合物,该聚合物显着地掺杂了石墨烯。这与更广泛使用的支撑层聚甲基丙烯酸甲酯形成对比,该支撑层在转移期间不会引起明显的掺杂。含氟聚合物的掺杂机理可以通过热退火或在溶剂中浸泡引起的石墨烯基面上的氟原子重排来解释,这会在石墨烯表面附近引发有序偶极矩。石墨烯与含氟聚合物的同时转移和掺杂显着增加了载流子密度,并且所得的单层石墨烯膜表现出约320Ω/ sq的薄层电阻。最后,此处介绍的方法用于在塑料基板上制造柔性和透明石墨烯电极。

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